国家/地区 中国（16） 美国（15） 欧洲专利局（EPO）（7） 世界知识产权组织（7） 台湾（5） 韩国（4） 日本（3） 加拿大（2）
IPC部 C（31）
IPC大类 C30（31）
IPC小类 C30B（31）
IPC C30B029/02（31）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
WANG D（3） YAN Y（3） ZHANG J（3）
LI X（2） LIN S（2） NING J（2）
WANG C（2） WANG L（2）
公开年 2014（15） 2013（12） 2015（4）
申请年 2013（31）
专利权人 UNIV XIDIAN（3） EMPIRE TECHN.（2） HANGZHOU GEL.（2） NIPPON MININ.（2）
SHANGHAI INS.（2） UNIV NANCHAN.（2）

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Nanocomposite used for reverse storage of hydrogen, comprises monocrystalline or polycrystalline graphene in form of cylindrical spiral roll containing grains having preset minimum diameter and constant spacing.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, KACZMAREK L, MODRZYK W

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Extraction of carbon used in formation of graphene film used for electronic device e.g. super capacitor, involves depositing portion of graphite on substrate, oxidizing graphite and obtaining graphite oxide, and forming graphene.

NUNNERLEY M J

Copper foil for graphene production and graphene production method used for producing high-quality large-area graphene at low cost.

KOHIKI M, SAKAGUCHI K

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Preparation of monocrystalline graphene involves performing primary heat treatment of metal substrate, growing monocrystalline graphene, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching.

CHENG H, MA T, REN W