国家/地区 美国（13） 世界知识产权组织（8） 中国（7） 韩国（6） 日本（4） 台湾（4） 欧洲专利局（EPO）（2）
IPC部 B（14）
IPC大类 B82（14）
IPC小类 C30B（14）
IPC B82Y040/00（12） B82Y030/00（10） C30B029/02（9）
C01B031/04（8） C01B031/02（6） H01L021/02（6）
H01L029/16（5） C01B032/186（4） C23C016/26（4）
C30B025/18（3） H01B001/04（3） H01L029/06（3）
B32B009/00（2） B32B009/04（2） B82B003/00（2）
发明人 WANG H（2）
公开年 2012（7） 2013（5） 2014（2）
申请年 2012（14）
专利权人 WANG H（2）

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Manufacturing electrode, used in e.g. supercapacitor, comprises using precursor particles to form nanoparticles on graphene sheet and diffusing and re-crystallizing nanoparticles to form single-crystal structure on surface of graphene sheet.

DAI H, WANG H