国家/地区 中国（22） 韩国（4） 美国（3） 世界知识产权组织（3） 英国（2）
IPC部 C（31）
IPC大类 C30（31） H01（14） C01（8）
C23（8） B01（2） B82（2）
IPC小类 C30B（31）
IPC C30B025/18（31）
发明人 WANG Y（4） FENG H（3） LI X（3）
TANG J（3） CHANG K（2） CHEN K（2）
CHEN X（2） CHEN Z（2） DIXON S（2）
GUINEY I（2） LI C（2） LIU J（2）
PAN Y（2） SHAO C（2） THOMAS S（2）
公开年 2022（14） 2021（12） 2023（5）
申请年 2021（31）
专利权人 UNIV PEKING（3） CEC COMPOUND.（2） CHINESE ACAD.（2） PARAGRAF LTD（2）
UNIV HENAN（2） UNIV SHANDON.（2） UNIV SUNGKYU.（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Method for rapidly growing double-layer graphene single crystal, by adding catalyst and polished copper foil into two quartz boats, annealing the copper foil in a vacuum atmosphere, passing hydrogen and carbon dioxide into quartz tube, and removing the copper foil from the center of tube furnace.

TANG C, GONG P, SUN Z

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J