国家/地区 台湾（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/02（7）
发明人
公开年 2015（2） 2016（2） 2022（2）
申请年 2015（2） 
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.

TZENG Y, CHANG C, TZENG Y H

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z