国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24） H01（11） C23（6）
C01（4） B82（2） C09（2）
IPC小类 C30B（24）
IPC C30B025/18（11） C30B029/02（8） C30B029/40（7）
H01L021/02（5） C30B025/16（4） C30B028/14（3）
B82Y040/00（2） C01B032/05（2） C01B032/156（2）
C01B032/16（2） C01B032/168（2） C01B032/194（2）
C23C016/02（2） C23C016/26（2） C30B001/10（2）
发明人 FENG H（3） TANG J（3） WANG Y（3）
ZHANG J（3） CHEN X（2） HAO Y（2）
LI P（2） LI X（2） MA P（2）
NING J（2） PAN Y（2） SHAO C（2）
WANG D（2） XU P（2） XU X（2）
公开年 2022（24）
申请年 2021（24）
专利权人 CEC COMPOUND.（2） UNIV SHANDON.（2） UNIV XIDIAN（2）

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Constant temperature device for crystal growth, has connecting block that is fixedly connected with seed crystal rod whose lower end is connected with crystal through straight slot.

YANG J

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation method of high-pressure single crystal lithium vanadium fluorophosphate positive electrode material used in field of lithium ion battery, involves mixing vanadium phosphate with lithium fluoride, supplementary fluorine source, flux, carbon source, and ball-milling dispersant.

SONG M, WEI J, DU N

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.

ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J