国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24） H01（7） C23（6）
C01（5） B82（3）
IPC小类 C30B（24）
IPC C30B029/02（15） C30B025/18（9） C01B031/04（5）
C23C016/26（4） C30B025/00（4） B82Y040/00（3）
C30B025/02（3） B82B003/00（2） B82Y030/00（2）
C01B031/02（2） C01B032/182（2） C01B032/186（2）
C01B032/188（2） C23C016/02（2） C23C016/44（2）
发明人 YU G（4） ZHANG H（4） CHEN X（3）
CHEN Z（3） LI L（3） SUN L（3）
XU X（3） ZHANG Y（3） ZHANG Z（3）
ZHAO X（3） JIANG M（2） LI X（2）
SUI Y（2） WANG H（2） WU T（2）
公开年 2015（24）
申请年 2015（13）  2014（8）  2013（3） 
专利权人 SHANGHAI INS.（5） UNIV SHANDON.（3） UNIV PEKING（2）

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Preparation of single-crystal graphene involves taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding hydrogen and argon and heating.

WANG X, LI J, ZHONG Q, ZHONG Y

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Regulating and controlling silicon carbide base epitaxial graphene electronic band gap comprises e.g. preparing epitaxy graphene sample, using SRIM software, using ion beam to silicon carbide base epitaxial graphene sample for irradiation.

FU G, QIN X, WANG F, ZHAO J

Preparing germanium quantum dot used in photodetector element, by cleaning substrate to remove contaminants, transferring single atomic graphene layers on cleaned substrate and growing germanium quantum dot on graphene layer.

YANG Y, WANG R, ZHANG Z, ZHANG J

Preparation of patterned graphene used for flexible electrode, field effect transistor, sensor part or display device, by forming graphite sheet target pattern into copper foil surface, heating, and growing.

DU M, FANG Y, LI L, LI X

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G