国家/地区 世界知识产权组织（18）
IPC部 B（18）
IPC大类 B32（18）
IPC小类 B32B（18）
IPC C30B029/02（13） B82Y040/00（12） C01B031/02（10）
C01B031/04（9） C23C016/26（8） B82Y030/00（7）
B32B009/00（6） B32B009/04（6） C01B032/184（4）
C01B032/186（4） C23C016/02（4） C23C016/56（4）
C30B025/18（4） H01L021/02（4） B05D005/12（3）
发明人 AHMED M（2） IACOPI F（2）
公开年 2010（3） 2011（3） 2014（3） 2015（2）
申请年 2009（4）  2011（2）  2012（2）  2013（2）  2014（2）  2016（2） 
专利权人 EMPIRE TECHN.（2） UNIV GRIFFIT.（2） UNIV SYDNEY .（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Process for transferring nanolayers of e.g. graphene, involves placing nanolayer, separating nanolayer from initial substrate, and removing liquid until nanolayer is deposited on final substrate.

BOSCA MOJENA A, PEDROS AYALA J, MARTINEZ RODRIGO J, CALLE GOMEZ F, PALACIOS GUTIERREZ T, BOSCA M, PEDROS A, MARTINEZ R, CALLE G, PALACIOS G, MOJENA A, AYALA J, RODRIGO J, GOMEZ F, GUTIERREZ T

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T