国家/地区 韩国（3） 英国（2） 美国（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B032/186（8）
发明人 DIXON S（2） GUINEY I（2） THOMAS S（2）
公开年 2021（3） 2022（3） 2023（2）
申请年 2021（8）
专利权人 PARAGRAF LTD（2） UNIV SUNGKYU.（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X