国家/地区 欧洲专利局（EPO）（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B032/184（12）
发明人 AHMED M（2） BERRY V（2） IACOPI F（2）
MANCEVSKI V（2） SEACRIST M R（2） VLADIMIR M（2）
公开年 2016（3） 2013（2） 2018（2） 2021（2）
申请年 2011（2）  2014（2）  2016（2）  2017（2）  2020（2） 
专利权人 SUNEDISON SE.（2） UNIV GRIFFIT.（2） UNIV SYDNEY .（2） UNIVERSAL MA.（2）

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T