国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8） C23（5） H01（2）
IPC小类 C30B（8）
IPC C30B025/02（8）
发明人 ZHANG Y（8）
公开年 2012（5）
申请年 2012（4）  2017（2） 
专利权人 UNIV XIDIAN（5） CHONGQING GR.（2）

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Preparing graphene based on copper film auxiliary annealing, useful for sealing gas and liquid, comprises cleaning silicon substrate, obtaining 3C-silicon carbide heteroepitaxial film, reacting, annealing, reconstructing and removing film.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Forming graphene involves putting cleaned silicon substrate into chemical vapor deposition system reaction chamber, heating, placing specific hetero-epitaxy film, depositing nickel film on the substrate by electronic beam, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H