国家/地区 中国（16）
IPC部 C（16）
IPC大类 C30（16） C23（4） C01（3）
B82（2） H01（2）
IPC小类 C30B（16）
IPC C30B029/02（16）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
WANG D（3） YAN Y（3） ZHANG J（3）
LI X（2） LIN S（2） NING J（2）
WANG C（2） WANG L（2）
公开年 2013（8） 2014（6） 2015（2）
申请年 2013（16）
专利权人 UNIV XIDIAN（3） HANGZHOU GEL.（2） SHANGHAI INS.（2） UNIV NANCHAN.（2）

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Preparation of monocrystalline graphene involves performing primary heat treatment of metal substrate, growing monocrystalline graphene, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching.

CHENG H, MA T, REN W

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Graphene growing platform comprises quartz boat, quartz plate, quartz stone and base provided on bottom of quartz plate, where base and shape of bottom of quartz boat are matched with each other.

JIN H, LIU Z, PENG P, WANG Z, ZHOU Z

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate, washing, drying, placing in reaction chamber, evacuating, filling hydrogen, heating, filling methane, and heating.

SHI Y, HAO Y, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A