国家/地区 中国（26）
IPC部 C（26）
IPC大类 C30（26） C23（9） C01（7）
H01（5） B01（2） B82（2）
IPC小类 C30B（26）
IPC C30B029/02（18） C30B025/18（12） C23C016/26（6）
C01B032/186（4） C30B025/00（4） C30B025/02（4）
C01B031/04（3） C30B029/36（3） C30B029/64（3）
H01L021/02（3） B82Y040/00（2） C01B032/184（2）
C01B032/194（2） C23C014/06（2） C23C014/34（2）
发明人 XU X（6） ZHANG J（4） ZHANG Z（4）
CHEN X（3） LIU K（3） REN H（3）
TAN G（3） XIA A（3） ZHAO C（3）
ZHAO X（3） CHENG X（2） LI Y（2）
LIU J（2） MA Q（2） SUN L（2）
公开年 2016（17） 2017（9）
申请年 2016（26）
专利权人 UNIV PEKING（3） UNIV SHAANXI.（3） UNIV SHANDON.（3） SHANDONG BEN.（2）

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Synthesizing reduced nuclei density monocrystalline graphene comprises electrochemical polishing rectangular thin copper sheet in phosphoric acid solution, annealing, introducing methane and hydrogen, and growing graphene.

SUN Z, LIU B

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Preparation of millimeter-sized single-layer monocrystalline graphene, involves annealing copper foil into furnace, introducing methane and hydrogen, cooling foil and passing argon and hydrogen and reducing furnace temperature.

LIU J, XU Y, ZUO Z, LIN L, HUANG Z, LAI F

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M