国家/地区 中国（28）
IPC部 C（28）
IPC大类 C30（28） C23（14） C01（13）
B82（6） H01（4）
IPC小类 C30B（28）
IPC C30B029/02（19） C23C016/26（11） C01B031/04（8）
C30B025/18（8） C01B031/02（6） C30B025/02（6）
B82Y040/00（5） B82Y030/00（4） C30B033/02（4）
C23C016/02（3） C30B029/64（3） C01B032/186（2）
C23C016/458（2） C23C016/56（2） C30B001/02（2）
发明人 ZHANG Y（11） GUO H（10） ZHANG K（10）
LEI T（8） DENG P（7） DING G（4）
TANG X（4） XIE X（4） ZHAO Y（3）
BI H（2） CHEN X（2） DI Z（2）
HUANG F（2） JIANG M（2） JIN H（2）
公开年 2012（28）
申请年 2012（19）  2011（8） 
专利权人 UNIV XIDIAN（11） CHINESE ACAD.（3） CHINESE ACAD.（2） DING G（2）
PENG P（2） SHANGHAI INS.（2） XIE X（2）

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X