国家/地区 世界知识产权组织（12）
IPC部 C（12）
IPC大类 C30（12） C01（8） H01（7）
C23（6） B82（3） B01（2）
C04（2）
IPC小类 C30B（12）
IPC C30B029/02（7） C01B032/186（4） C30B025/18（4）
C30B029/64（3） B82Y030/00（2） B82Y040/00（2）
C01B032/182（2） C01B032/184（2） C23C016/02（2）
C23C016/04（2） C23C016/26（2） C30B001/02（2）
C30B025/02（2） C30B029/38（2） C30B030/02（2）
发明人 FIMLAND B M（2） MANCEVSKI V（2） MUNSHI M（2）
VLADIMIR M（2） WEMAN H（2）
公开年 2021（12）
申请年 2020（9）  2021（3） 
专利权人 CRAYONANO AS（2） UNIVERSAL MA.（2）

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S