国家/地区 世界知识产权组织（9）
IPC部 C（9）
IPC大类 C30（9） H01（6） C01（5）
C23（4）
IPC小类 C30B（9）
IPC C30B029/02（3） C01B032/186（2） C23C016/02（2）
C23C016/26（2） C30B023/02（2） C30B029/36（2）
H01L021/02（2） H01L021/20（2） H01L021/205（2）
发明人 MITSURU M（2） NORIYUKI M（2） TAKAYASU O（2）
TAKUJI M（2）
公开年 2022（9）
申请年 2021（6）  2022（3） 
专利权人 ROHM CO LTD（2）

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Ionic plastic crystal used in electrochemical cell, supercapacitor, and solid electrolyte composition for electrochemical cell, comprises delocalized anion paired with cation derived from organic guanidine, amidine or phosphazene superbase.

DAIGLE J, BARRAY F, GUERFI A, FLEUTOT B, GARITTE E, KRACHKOVSKIY S, KOH K S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Substrate used for semiconductor module applications e.g. diode modules, comprises silicon carbide single crystal substrate, graphene layer, silicon carbide epitaxial growth layer, and polycrystalline layer, in order.

MAKOTO T, TAKUJI M, MITSURU M, NORIYUKI M, TAKAYASU O

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Manufacture of expanded graphite for forming exfoliated graphene oxide, involves adding iron(III) salt to mixture containing potassium manganese oxide, graphite and sulfuric acid/phosphoric acid to form solid graphite-intercalated compound, separating obtained compound and heating.

CHEN A, SALVERDA M, THIRUPPATHI A R, SIDHUREDDY B, RAHMATI F

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S