国家/地区 中国（5） 美国（4）
IPC部 G（9）
IPC大类 G01（9） H01（9）
IPC小类 G01J（9）
IPC G01J005/20（9）
发明人
公开年 2021（6） 2022（2）
申请年 2021（9）
专利权人

High-performance microbolometer for defense and commercial systems applications, comprises vanadium oxide and carbon nanotubes or graphene.

ZELLER J W, SOOD A K

Phononically-enhanced imager pixel disposed on imaging plane, comprises set of nanowires coupled to micro-platform and surrounding substrate in which photonic sensing structure having semiconductor device is disposed in micro-platform.

CARR W N

System for cooling graphene, has bias circuit that is configured to apply bias voltage across tunneling barrier, where bias voltage is less than gap voltage of superconductor and greater than one-half of gap voltage.

ENGLUND D R, FONG K C

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Germanium-doped long wave infrared terahertz detector array used in e.g. weather forecast, has absorption region array and common electrode which are located on front surface of wafer, and back electrode passivation layer located on barrier sheet electrode.

DAI N, YIN Z, SHAN Y, DOU W, LIU C, WANG Y, DENG H

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Composite useful in photoelectric device, thermal sensing device and electronic device for sensing heat or infrared light, comprises block copolymer including e.g. alkyl-based first structural unit, and polyvalent metal ion.

CHOI Y, KIM T H, WANG L, VINCENZO C, ZHUN Z, CHIARA D, DARAIO C, ZHOU Z, COSTANZA V, CHOI Y S

Dual-mode non-refrigeration infrared detector heat-sensitive layer structure, has thermo-sensitive film layer provided with amorphous germanium silicon film, where sides of germanium silicon film are connected with vanadium oxide film.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Two-dimensional magnetic film heterojunction non-refrigeration infrared detector has top electrode layer, and transparent top gate insulating layer containing high-dielectric material e.g. hafnium dioxide and poly(methyl methacrylate).

LONG M, WANG R, SHAN L, LI F, HAN T