国家/地区 中国（64）
IPC部 G（64）
IPC大类 G01（64） H01（58） B82（5）
H04（4） C01（3） G02（3）
G05（3） H05（3） B81（2）
IPC小类 G01J（64）
IPC G01J001/42（19） G01J005/20（16） H01L031/09（15）
H01L031/18（15） H01L031/028（11） H01L027/146（10）
H01L031/0232（7） H01L031/113（7） G01J001/02（6）
G01J001/44（6） G01J005/00（6） H01L031/0224（6）
H01L031/0352（6） H01L029/16（5） H01L031/10（5）
发明人 FENG S（4） HU H（4） OGAWA S（4）
SHIMATANI M（4） DU C（3） OKUDA S（3）
QIN H（3） SHI H（3） WANG C（3）
WEI X（3） YANG J（3） ZHANG Z（3）
CHANG S（2） CHEN X（2） COLLI A（2）
公开年 2021（16） 2018（12） 2017（8） 2022（8） 2016（7） 2020（5） 2013（3） 2015（2）
申请年 2017（11）  2021（11）  2020（10）  2016（6）  2018（6）  2022（6）  2019（4）  2014（3）  2015（3）  2011（2） 
专利权人 JIANGSU XINC.（4） MITSUBISHI E.（4） NOKIA CORP（4） NOKIA TECHNO.（4）
CHINESE ACAD.（3） SAMSUNG ELEC.（2） SHANGHAI INT.（2） SHANGHAI TEC.（2）
SUZHOU INST .（2） UNIV HEFEI T.（2） UNIV NAT DEF.（2） UNIV NORTH C.（2）
ZHONGSHAN KE.（2）

Room temperature nickel telluride-graphene heterojunction terahertz detector comprises silicon dioxide layer provided with nickel telluride and graphene heterojunction, and two ends of heterojunction is source electrode and drain electrode.

CHEN X, JIANG M, YAO C, SHEN J, WANG L

Graphene/non-polar gallium nitride UV polarization detector used in e.g. civil use, has graphene layer that is not coated with titanium/gold metal electrode layer, and is covered on graphene layer on isolation layer.

LIN T, WANG W

Terahertz graphene Josephson junction detection system based on microwave resonant circuit readout, has microwave network analyzer that monitors microwave resonance circuit resonance frequency and quality factor change of resonance frequency.

LUO Q, LI F, LIN Z, LI J, SHI S, MIAO W

Photoelectric detector based on carbon quantum dots and noble metal nano particles, has noble metal nano particles fixedly paved between two electrodes of one side of graphene layer far away from substrate, and one side of noble metal nano-particle fixedly paved with carbon quantum dot.

JI X, DENG S, WANG Q, GE W, YANG P, YANG W

Pixel structure for infrared image graphene photodiode, reset transistor, amplifying transistor and switching transistor, has substrate of graphene diode respectively provided with shallow trench insulating isolation groove.

XIAO D, QI W, LIU H, WANG Q, SUN Y, YIN J, XIE H, DU S

Hole-shaped magnetic tunnel junction terahertz wave detector useful for basic research field, comprises anti-ferromagnetic layer, pinned layer, barrier layer, and free layer, and anti-ferromagnetic layer includes hard magnetic anti-ferromagnetic material.

YU M

Device for heating detection component and optical component of infrared temperature measuring device i.e. non-contact human body temperature measuring product, has control module for controlling heating module to heat detection component and optical component according to temperature information.

WANG X

Near infrared two area flexible photoelectric detector based on two-dimensional material nanometer belt, has near-infrared two region whose spectral absorptivity of organic modified layer is not lower than near-infrared two region spectral absorptivity of methyl blue or porphyrin compounds.

WANG B, AN J, LI S

UV-infrared wavelength detector based on photoelectric detection units, has photodetecting units whose current ratio changes regularly with increase of wavelength of detected light and current ratio is adjusted according to current ratio.

FAN R, ZHAO Y, LI C, FU C, LUO L

Complementary metal-oxide-semiconductor (CMOS) based image sensor has specific line that crosses and in contact with free layer of magnetic tunnel junction in corresponding row, and other lines electrically connected to pinned layer of magnetic tunnel junction in corresponding column.

JAISWAL A R, JACOB A P, BIAN Y, PRITCHARD D C, JAISWAL A