国家/地区 美国（9） 韩国（5） 中国（4） 世界知识产权组织（3） 日本（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 H01B（10）
IPC H01B001/04（10）
发明人 YANG J（2）
公开年 2015（5） 2016（4）
申请年 2015（10）
专利权人 BOE TECHNOLO.（2）

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Manufacture of core-shell structured nanowire e.g. copper nanowire used for transparent electrode for e.g. solar cell, involves providing metal nanowire and coating metal nanowire with graphene by plasma chemical vapor deposition.

LEE Y G, JEONG Y J, AHN Y M, LEE D H

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Hybrid film used in transparent conductive film application, has nanostructures that are formed on substrate, and graphene domains that are provided on substrate and nanostructures and are integrally connected to nanostructures.

GONG K

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Graphene oxide doped material for electrode of pixel structure in display device, has hetero material part formed with graphite layer and hetero layer, where graphite layer is formed with mixing layer and hetero layer.

BAI F, LIU J, YANG J