国家/地区 美国（12）
IPC部 B（12）
IPC大类 H01（12） C01（9） C23（7）
B01（6） B82（5） B05（3）
B32（3） C08（2） C09（2）
H05（2）
IPC小类 H01J（12）
IPC H01J037/32（12）
发明人 ANZELMO B H（2） CHOI J（2） HONG B H（2）
STOWELL M W（2）
公开年 2015（2） 2016（2） 2021（2）
申请年 2013（3）  2015（2）  2020（2） 
专利权人 GRAPHENE SQU.（2） HONG B H（2） LYTEN INC（2） SAMSUNG ELEC.（2）

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D

Reactor system useful for producing carbon agglomerates, comprises microwave energy source configured to generate microwave energy, field-enhancing waveguide, expansion chamber in fluid communication with constricted region and configured to expand plasma, and outlet.

TANNER D, COOK D, ANZELMO B H, KALLURI R, STOWELL M W

Treating particles for repairing defects in fullerene or graphene containing nanoparticles involves disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing particles.

BUCKLAND J, WALTERS D

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J