国家/地区 日本（7）
IPC部 H（6） C（3）
IPC大类 H01（6） C01（3）
IPC小类 H01L（6） C01B（3）
IPC H01L029/786（5） H01L021/336（3） C01B031/02（2）
H01L021/28（2） H01L029/06（2）
发明人 HARADA N（2） IWAI D（2） KONDO T（2）
OFUCHI M（2）
公开年 2009（7）
申请年 2008（4）  2007（3） 
专利权人 FUJITSU LTD（7）

Semiconductor device e.g. transistor has channel formed of bi-layer graphene film.

HARADA N, OFUCHI M

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Graphene transistor e.g. graphene FET for electronic device, has carbon film whose width of side near source electrode of channel region is wider than width of carbon film of side near drain electrode of channel region.

HARADA N

Manufacturing method of semiconductor device e.g. transistor, involves forming crystal film pattern on substrate and making graphene sheet grow from catalyst film pattern.

AWANO Y

Manufacturing method of graphene sheet used for manufacturing of semiconductor device involves heating carbonized material layer at predetermined temperature.

KONDO T, SATO S

Package for mounting e.g. high power amplifier for mobile phone, has flexible carbon nanotube sheet that consists of graphene and carbon nanotube bundle on mounting surface of electronic device chip.

IWAI D, KONDO T

Electronic device manufacturing method involves regulating crystal orientation along extension direction of graphene and width of graphene with scanning probe microscope.

HIROSE S, IWAI D, OFUCHI M, OBUCHI M