国家/地区 韩国（9） 美国（8） 世界知识产权组织（5） 中国（4） 日本（2）
IPC部 C（7） H（7） B（5）
G（2）
IPC大类 C01（7） H01（7） B82（5）
C23（4） B01（2）
IPC小类 C01B（7） H01L（6） B82Y（5）
C23C（4） B01J（2） H01B（2）
IPC C01B031/02（6） C01B031/04（5） B82Y030/00（4）
B82Y040/00（4） C23C016/26（3） H01B001/04（2）
H01L021/20（2） H01L029/06（2） H01L029/16（2）
H01L029/786（2） H01L031/04（2）
发明人 AHN J（10）
公开年 2012（10）
申请年 2011（6）  2012（4） 
专利权人 UNIV SUNGKYU.（5） GRAPHENE SQU.（4） UNIV SUNGKYU.（4） UNIV SUNGKYU.（3）
HANWHA TECHW.（2） SAMSUNG ELEC.（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2）

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Flexible solar cell, has bottom electrode provided with opening part, insulating layer fixed at opening part of bottom electrode, graphene layer formed on insulating layer, and upper electrode arranged between insulating and graphene layers.

AHN J, HONG B H, LEE S K, YAN C

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Flexible/stretchable semiconductor device such as Si FET used in electronic device e.g. LCD, includes a semiconductor layer formed on flexible/stretchable substrate, and graphene electrode formed on semiconductor layer.

AHN J, HONG B H, JANG S, JANG H, LEE W H, HYEON A J, HUI H B, JAE J S, UK J H, HO L W

Elastic-type three dimensional touch sensor for use with e.g. personal digital assistant, has controller supplying voltage to graphene electrode patterns to sense pressure intensity of reduced pressure register.

AHN J, HONG B H, LEE Y B, BAE S K, KIM H K, BAE S, HONG B, KIM H, LI R, AN Z, PEI X, JIN J

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Manufacture of graphene used for e.g. graphene sheet, involves reacting reaction gas including carbon source, and heat on substrate.

AHN J, BAE S K, HONG B H, JUNG M H, KIM H R, KIM S J, AHN J H, BAE S

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S