国家/地区 美国（18） 韩国（16） 世界知识产权组织（13） 日本（11） 中国（10） 欧洲专利局（EPO）（7） 台湾（5） 土耳其（2）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28） C23C（28） B82Y（9）
B05D（6） H01B（5） B01J（4）
B32B（3） C09D（3） H01L（3）
H01M（3） B82B（2） C01G（2）
C30B（2） H01G（2）
IPC C01B031/02（28）
发明人 CASTRO A H（2） GUO S（2） OZKAN C S（2）
OZKAN M（2） OZYILMAZ B（2） WANG W（2）
公开年 2015（28）
申请年 2014（14）  2013（8）  2015（6） 
专利权人 GUO S（2） GWANGJU INST.（2） OZKAN C S（2） OZKAN M（2）
UNIV CALIFOR.（2） UNIV SINGAPO.（2） WANG W（2）

Manufacture of carbon nanotube composite wire, involves providing carbon nanotube array, drawing carbon nanotube film from carbon nanotube array using tool, and treating carbon nanotube film using graphene solution.

LIN X, WEI H, LIU P, ZHANG L, JIANG K, FAN S

Layer stack used to grow graphene or carbon nanotubes that are used e.g. to make integrated circuit or printed circuit board interconnect, comprises substrate, protective layer, and attachment surface disposed between substrate and layer.

SILVA S R, AHMAD M

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Preparing free or transferrable graphene sheet used in sensors to detect nitrogen dioxide, comprises pre-treating polycrystalline copper substrate with hydrogen-containing plasma, depositing graphene onto substrate, and decoupling graphene.

KUMAR S, OSTRIKOV K, VAN DER LAAN T A

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Direct method of growing patterned graphene involves forming mask layer having hole exposing site in which graphene is formed, on substrate, forming catalytic metal layer on mask layer, and forming graphene on catalytic metal layer.

PARK S J, KWON H J, KANG J W, KIM N Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Transfer of graphene used for e.g. solar cell, involves vacuum thermal-processing graphene laminate of support substrate and graphene, and transfer-target substrate to transfer graphene of graphene laminate to transfer-target substrate.

LEE B H, LEE S K, LEE S C