国家/地区 美国（16）
IPC部 C（16）
IPC大类 C01（16） H01（16） B82（4）
C23（4）
IPC小类 C01B（16）
IPC H01L029/16（16）
发明人 LEE J（3） LEE J H（3） PARK S（3）
HEO J（2） HEO J S（2） LEE K（2）
LEE K Y（2） PARK S J（2） RUHL G（2）
RUHR G（2）
公开年 2016（16）
申请年 2015（10）  2014（4）  2016（2） 
专利权人 SAMSUNG ELEC.（4） INFINEON TEC.（2）

Preparation of reduced and N-doped graphene oxide used in a transistor, comprises preparing mixed solution containing graphene oxide and tetramethylammonium hydroxide, and heating the mixed solution.

KHAN F, BAEK S, KIM J H, BAEK S H

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Graphene double-barrier resonant tunneling apparatus, has second contact which applies second voltage to fermion sink nanolayer, and transport contact which enables electric current through fermion transport nanolayer.

ASTLEY M R, ASTLEY M

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K