国家/地区 美国（7）
IPC部 H（5） B（4） C（3）
IPC大类 H01（5） B01（3） C01（3）
IPC小类 H01L（5） B01J（3） C01B（3）
IPC C01B031/04（3） H01L021/02（3） B01J019/08（2）
H01L029/16（2） H01L029/786（2）
发明人 KIM S（7）
公开年 2017（7）
申请年 2017（4）  2016（2） 
专利权人 SAMSUNG ELEC.（2）

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Preparing metal-carbon composite involves mixing carbon nanotube, graphene oxide, metal salt and metal nanowire to obtain aqueous mixture, freezing to obtain cryo-composite, drying to obtain dry composite and reducing.

WORSLEY M A, SATCHER J H, KUCHEYEV S, CHARNVANICHBORIKARN S, COLVIN J D, FELTER T E, KIM S, MERRILL M, ORME C A

Semiconductor device e.g. dynamic RAM device for use in electronic system, has doped pattern provided between buffer and channel patterns, and buffer pattern provided, where doped pattern comprises graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Solar cell, has doped graphene layer formed on silicon quantum dot layer, and encapsulation layer formed on doped graphene layer and encapsulating doped graphene layer, where electrodes formed on upper and lower parts of hybrid structure.

CHOI S H, KIM S, KIM J M, SUK H C, SUNG K, JONG M K, HO C S, MIN K J

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Two-dimensional material hard mask for manufacturing electronic device e.g. capacitor, has hydrogen, oxygen and two-dimensional material layer with layered crystalline structure, and carbon structure includes graphene sheets.

SHIN K, SEOL M, SHIN H, KIM S, PARK S, SHIN K W, SEOL M S, SHIN H J, KIM S W, PARK S J