国家/地区 美国（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21） C23C（21） H01L（11）
H01J（3） B01D（2） B01J（2）
B32B（2） B82Y（2） C30B（2）
H01B（2） H01M（2）
IPC C23C016/26（21）
发明人 BYUN K（3） BYUN K E（3） LEE C（3）
LEE C S（3） LEE E（3） SHIN H（3）
SHIN H J（3） GLASS H（2） GUINEY I（2）
KIM C（2） KIM S（2） NARKEVICIUTE I（2）
THOMAS S（2） TYLER M（2） VARADARAJAN B N（2）
公开年 2021（21）
申请年 2020（10）  2021（10） 
专利权人 SAMSUNG ELEC.（3） LAM RES CORP（2） PARAGRAF LTD（2） TOKYO ELECTR.（2）
UNIV SINGAPO.（2）

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N