国家/地区 美国（22）
IPC部 C（22）
IPC大类 C23（22）
IPC小类 C23C（21） C01B（10） H01L（8）
H01J（4） H01M（3） C30B（2）
G01N（2） H01B（2）
IPC C23C016/26（10） C01B032/186（6） C23C016/02（6）
C23C016/455（6） H01L021/285（6） C23C016/44（4）
H01L021/02（4） H01L021/768（4） C23C016/40（3）
C23C016/50（3） H01J037/32（3） H01L023/532（3）
H01M004/62（3） H01M010/0525（3） C01B032/05（2）
发明人 SHIN H（4） BYUN K（3） SHIN H J（3）
SHIN K（3） BYUN K E（2） CHUNG J H（2）
LEE C（2） PARK G（2） PARK G O（2）
SHIN K W（2） YOO S K（2） YU S（2）
ZHENG Z（2）
公开年 2022（22）
申请年 2021（22）
专利权人 SAMSUNG ELEC.（4） APPLIED MATE.（2） IND TECHNOLO.（2） SK ON CO LTD（2）
UNIV CALIFOR.（2） UNIV SUNGKYU.（2）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Active material used in negative electrode for lithium secondary battery, comprises pores having preset size, and silicon-based compound having preset ratio of peak intensity in region having specific wavelength in Raman spectrum.

PARK G O, YOO S K, CHUNG J H, ZHENG Z, YU S, PARK G

Cathode active material e.g. for lithium secondary battery, comprises e.g. silicon-containing coating layer formed inside pores or on surfaces of carbon-based particles, and carbon coating layer formed on silicon-containing coating layer.

PARK G O, YOO S K, JANGDONGIL, CHUNG J H, JANG D I, ZHENG Z, ZHANG D, YU S, PARK G

Multilayer electrically conductive wire for use in aeronautics field to lighten airplane, has central support core, set of pairs of layers around central support core comprising intercalary layer made of non-carbon based material and graphene layer, and first layer arranged on outer surface.

LEKARSKI K

Adhesion promoting layer for depositing conductive layer on inorganic or organic-inorganic hybrid substrate to form conductive structure, includes metal oxide layer containing metal oxide and chelating agent, arranged on inorganic or organic-inorganic hybrid substrate, and interface layer.

HUANG M, WANG W, CHANG Y