国家/地区 世界知识产权组织（22）
IPC部 C（22）
IPC大类 C23（22）
IPC小类 C23C（21） C01B（10） H01L（7）
B32B（3） H01M（3） B82Y（2）
C30B（2） H01B（2） H01J（2）
H05H（2） H05K（2）
IPC C23C016/26（8） C01B032/186（5） C23C028/00（4）
C23C016/02（3） C23C016/44（3） C23C016/455（3）
C23C016/50（3） C23C016/54（3） H01L021/205（3）
B32B009/00（2） B82Y040/00（2） C01B033/10（2）
C01B033/22（2） H01J037/32（2） H01L021/02（2）
发明人 HEE L（2） HYUN L J（2） IMSUNGWOO（2）
JEON Y M（2） LEE H S（2） LIM H H（2）
LIM J（2） LIM J C（2） LIM S W（2）
MATSUMOTO T（2） PARK J G（2）
公开年 2022（22）
申请年 2021（22）
专利权人 TOKYO ELECTR.（3） APPLIED MATE.（2） DAEJOO ELECT.（2）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Negative electrode current collector used for metal battery, comprises current collector substrate, two-dimensional material layer formed on portion of at least one surface of current collector substrate and having atomic thickness, and metal layer formed on portion of two-dimensional material layer.

SHIN H S, LEE S Y, KIM S H, KIM M S, SUK S H, YOUNG L S, SOO K M

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Substrate used for dynamic thermal management, has surface of variable infrared emissivity, where surface of substrate comprises pendent composite sheets fixed to it, and each pendent composite sheet comprises surface of higher infrared emissivity and another surface of lower infrared emissivity.

KOCABAS C, ERGOKTAS M S, BAKAN G

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Patterning method for manufacturing of a desired pattern of an electrically conducting, semiconducting or insulating material on a substrate,.

LEPPAENIEMI J, SNECK A