国家/地区 中国（7）
IPC部 H（7）
IPC大类 H01（7） H10（2）
IPC小类 H01L（7）
IPC H01L029/06（4） H01L029/423（4） H01L029/786（4）
H01L029/08（3） H01L029/16（3） H01L021/336（2）
H01L027/11582（2） H01L029/417（2） H01L029/45（2）
H01L029/51（2） H01L029/66（2） H01L029/78（2）
H01L033/00（2） H10B043/30（2）
发明人 JIN C（7）
公开年 2023（7）
申请年 2022（5）  2023（2） 
专利权人 SAMSUNG ELEC.（5） JIANGXI MTC .（2）

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S

Multi bridge channel field effect transistor for use in e.g. memories, has gate insulating layer that surrounds first channel layer, and gate electrode that surrounds first channel layer with gate insulating layer.

KIM C, KIM U, JUNG A, BYUN K, JIN Y, JIN C, JUNG A R, BYUN K E

Semiconductor device for use in electronic apparatus, has source/drain structure including silicide film to be formed between first semiconductor region and first electrode, and conductive barrier to be formed.

KIM C, NAM S, SHIN K, LEE D, LI D, JIN C, NAM S G, SHIN K W, LEE D H