国家/地区 中国（13）
IPC部 H（13） C（5） B（2）
G（2）
IPC大类 H01（13） C23（2） G01（2）
IPC小类 H01J（13）
IPC H01J037/32（5） H01J001/34（3） C23C016/04（2）
C23C016/26（2） H01J001/304（2） H01J009/02（2）
H01J009/12（2） H01L021/02（2）
发明人 WANG Z（3） ZHANG Y（2）
公开年 2021（13）
申请年 2021（13）
专利权人

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Photoelectric surface for use as electron source in device, has window material, photoelectric conversion layer provided with light-incident surface and electron emission surface, and carbon layer provided on electron emission surface.

HIROYUKI T, RYOTARO I, MOTOHIRO S, TOMOHIKO H, TAKETOMI H, ISHIKAWA R, SUYAMA M, HIRANO T

Graphene field emission cathode for vacuum electronic device, has metal nano-particles that are combined on surface of graphene nanometre sheet.

ZHENG H, LIANG D, HONG X

Self-aligned graphene field emission gate structure, has gate voltage power supply whose one pole is applied to substrate, and whose other pole is applied to gate for applying different magnitudes of gate voltage between substrate and gate.

LI Z, LI C, LIU G, DAI Q

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Cesium telluride solar-blind UV photocathode has silicon dioxide film layer which is made on surface of graphene layer by atomic layer deposition, and cesium telluride solar-blind UV photocathode portion that is fabricated on silicon dioxide film.

CHEN J, CHEN Q, ZHANG Y, CHANG L, XU S, LI X

Plasma etching anode plate used in semiconductor processing manufacturing process, has anode plate main portion provided multiple mounting positions, where through hole is individual detachably mounted on mounting position.

WANG Z, WU L, KE L

Graphene powder surface modified plasma reaction device comprises shell and rotating structure comprising roller and rotating motor, where rotating structure is set in vacuum cavity in shell.

HUANG L, JIAN X

Electron beam system for fabricating semiconductor device e.g. logic and memory devices, has protective pellicle that is transparent to back-scattered electrons and provides physical barrier to particles directed at detector surface.

SCHULTZ W G

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A