国家/地区 中国（7）
IPC部 C（6） H（3）
IPC大类 C30（4） H01（3） C01（2）
IPC小类 C30B（4） C01B（2） H01L（2）
IPC C30B023/02（4） C01B031/04（2） C30B029/02（2）
C30B029/40（2）
发明人 WANG W（7）
公开年
申请年 2009（2） 
专利权人 CHINESE ACAD SCI PHYSICS INST（7）

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Wavelength tunable UV detector has support substrate that is arranged with aluminum gallium nitride layer and graphene layer whose ends are arranged with electrodes on which electrode leads are arranged via bonding.

CHEN X, GUO L, WANG W, ZHAO M

Preparation of boron-doped graphene involves using boron-doped silicon carbide prepared by thermal decomposition method at high temperature.

CHEN L, CHEN X, GUO L, GUO Y, JIA Y, LI Z, LU W, WANG G, WANG W

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q