国家/地区 中国（21）
IPC部 C（21）
IPC大类 C01（21） C23（10） H01（8）
B82（5） B01（4） G01（2）
IPC小类 C01B（21） C23C（10） B01J（4）
B82Y（4） H01B（3） H01L（3）
G01N（2）
IPC C01B031/04（21）
发明人 BI H（3） HUANG F（3） ZHANG X（3）
DENG K（2） JOUVRAY A（2） LI Z（2）
LIU Z（2） TEO K B K（2） YANG H（2）
ZHANG W（2） ZHANG Y（2） ZHANG Z（2）
公开年 2015（13） 2014（4） 2016（4）
申请年 2014（21）
专利权人 SHANGHAI INS.（3） AIXTRON SE（2） CHANGZHOU 2D.（2）

Three-dimensional graphene macroscopic material comprises graphene tubes that are connected by covalent linkages.

BI H, HUANG F

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Preparing graphene single-crystal involves carrying out low pressure chemical vapor deposition for growing copper foil on substrate, utilizing methane as reaction precursor and hydrogen as reducing gas, and cleaning copper foil.

FU P, LI M, LI R, YU T, CHEN J, SHAO X

Quick graphene preparation device includes tubular furnace quartz pipe, sample loading cabin, vacuum valve, heating device, first and second air inlets and outlets, sample loading opening, shifting device, and multiple sample loading boats.

LIU Z, YANG H, ZHANG Z, ZHANG W, ZHANG X, ZHOU Z, DENG K

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

High electrical and thermal conductivity flexible three-dimensional graphene material comprises multiple three-dimensional graphene tube, three-dimensional graphene cloth and three-dimensional graphene felt.

BI H, HUANG F, ZHANG Y, YU L

Two-stage growth of high density, high electric conductivity, high heat conductivity graphene material, involves obtaining graphene material by two-stage chemical vapor deposition, and controlling graphene layers.

BI H, HUANG F, HUANG H

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G