国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12） C09（3） H05（2）
IPC小类 C01B（12） C09D（2） H05K（2）
IPC C01B032/194（12）
发明人 CAI J（12）
公开年 2022（12）
申请年 2022（8）  2021（4） 
专利权人 GUANGDONG MO.（12）

Preparation of graphene aerogel involves preparing graphene oxide slurry, coating, drying to obtain film, carrying out chemical reduction foaming treatment, draining, coating slurry on obtained semi-wet gel and drying obtained sample.

HE J, HUANG W, ZHU J, CAI J

Preparing graphene conductive ink involves preparing graphene-coated nano-copper materials, uniformly mixing and stirring nano copper material coated with graphene, organic silicon resin, hydroxy acrylic resin, solvent, dispersing agent, leveling agent, and defoaming agent, and then grinding.

WANG J, XIE Z, YE Y, CAI J

New amino-modified graphene used in metal anti-corrosion, where the graphene edge amino and carboxy are formed by transverse covalent bridging.

HAO Z, CHEN Q, CAI J

Method for preparing graphene foam casing, involves drying and soaking coated graphene oxide in acid solution to remove filler material to obtain graphene foam casing.

HAO Z, CHEN Q, CAI J

Preparing high thermal conductivity graphene composite thermal grease, comprises e.g. preparing graphene nano-copper composite material, distributing nano-copper particles between the layers, mixing graphene nano-copper composite material, zinc oxide and dimethyl silicone oil and post-processing.

WANG J, YE Y, HUANG S, CAI J

Preparing graphite film useful for heat sensitive type electronic device e.g. mobile phone, computer, comprises e.g. repeating copper treatment step after multiple times, washing remove copper ion solution, washing copper graphene film after high temperature rolling treatment.

HAO Z, CHEN Q, CAI J

Method of macro-mass preparation of hydroxyl-rich epoxy-type graphite involves mixing graphite flakes and first sulfuric acid and reacting, and adding second sulfuric acid to cooperate with first sulfuric acid to intercalate and modify graphite flakes to second graphite precursor.

HAO Z, LUO L, LV J, YU Z, CAI J

Semiconductor refrigerating graphene comprises ceramic substrate, where upper part of ceramic substrate provided with graphene PN junction, where PN graphene comprises left and right adjacent S end and D end.

HAO Z, DAI D, CAI X, ZHOU Y, CAI J

Preparing vacuum thermal sintering graphene temperature-equalizing plate useful in electronic product radiating system, comprises coating and drying graphene oxide slurry, stacking many sheets of graphene oxide films and graphene oxide layers, vacuum thermal sintering, heating and rolling.

HAO Z, GUO W, LV J, LIU Z, CAI J

Graphene hybrid material for heat dissipation system comprises graphene, functionalized graphene and reduced graphene oxide.

LIU Z, LV J, CAI J, HAO Z