国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（10） C04B041/50（5） B82Y030/00（4）
C04B041/85（4） B82Y040/00（3） C01B031/02（2）
C03C017/22（2） C04B035/622（2） C04B041/00（2）
发明人 GUO H（3） LEI T（3） ZHANG Y（3）
ZHANG C（2）
公开年 2013（6） 2014（3）
申请年 2013（10）
专利权人 UNIV XIDIAN（3）

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Manufacture of graphene sheet used for coated substrate, involves applying graphene or graphite oxide solution on blue steel substrate and drying solution on steel substrate.

RIEKEN W, RIEKEN V

Composite material comprises graphene-type carbon layer comprising graphite-type carbon material obtained by thermally decomposing polymer within composition, provided on base material containing resin.

FUKUDA R, IHARA H, NAKASUGA A, NOZATO S, TAKAFUJI M, GANAPATHY H S

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Preparing graphene/nickel-zinc-cerium-iron oxide nano-absorbing material comprises e.g. dissolving nickel-zinc-cerium-iron oxide powder in N,N-dimethylformamide, dropping graphite oxide-N,N-dimethylformamide, reacting and vacuum drying.

HUANG Y, WANG K, ZHANG W, WANG Y, WU H, SANG Y

Preparation of graphene oxide modified polycarboxylate water reducer includes adding sulfuric acid, potassium peroxydisulfate and phosphorus pentoxide into reactor, heating, adding natural graphite raw material, stirring, and filtering.

LV S, MA Y, ZHOU Q

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silica-based surface carboxylated graphene oxide self-assembled composite film, involves processing silicon wafer, cleaning, obtaining silicon wafer with silica-based surface, adding graphene oxide solution, and cleaning.

HUA C, CHENG X, LI P, CHENG H, SHU D, WANG C