国家/地区 中国（9）
IPC部 C（9）
IPC大类 C04（9） C01（3）
IPC小类 C04B（9）
IPC C04B041/50（7） C04B041/85（7） C01B031/04（3）
C04B035/50（2） C04B035/622（2）
发明人 ZHANG Y（9）
公开年 2013（9）
申请年 2013（5）  2012（4） 
专利权人 UNIV XIDIAN（7） SHAXI COAL C.（2）

Graphene-cerium oxide-based ceramic composite comprises specified amount of graphene oxide, cerium salt, lanthanum-type additive, and organic adhesive solvent.

YANG Y, ZHANG Y, FU D

Graphene-ceramic composite material comprises graphite oxide, cerium and zirconium salt, auxiliary agent or metal oxide additive, and organic adhesive solvent.

FU D, YANG Y, ZHANG Y

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C

Preparation of patterned graphene material for transistor, by cleaning silicon carbide wafer, coating photoresist layer, placing in buffered hydrofluoric acid solution, carrying out electron beam deposition of nickel film, and patterning.

LEI T, ZHANG Y, TANG X, ZHANG K, ZHAO Y, GUO H

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises growing carbon layer on substrate, growing carbon-silicon carbide layer and performing physical vapor deposition to plate copper film.

GUO H, ZHAO Y, LEI T, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y