国家/地区 中国（30）
IPC部 C（30） B（3） H（3）
IPC大类 C23（30）
IPC小类 C23C（30） C01B（13） C30B（2）
IPC C23C016/26（30）
发明人 LIU Z（30）
公开年 2021（5） 2014（4） 2019（4） 2020（4） 2022（4） 2018（3） 2013（2）
申请年 2019（7）  2013（4）  2020（4）  2021（4）  2014（3）  2016（2）  2018（2）  2022（2） 
专利权人 UNIV PEKING（17） BEIJING GRAP.（13） CHANGZHOU ER.（4） CHANGZHOU 2D.（3）
NINGBO INST .（3） CHINESE ACAD.（2）

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Heating furnace for use in chemical vapor deposition reaction device, has graphite plate supporting wafer substrate, where one side surface used for substrate is provided with growth graphene.

XUE Z, CHEN Z, SHAN J, WANG M, SUN J, LIU Z

Uniform gas mold for fiber graphene graphene, has uniform air channel respectively connected with air inlet hole and air outlet hole and used for conveying reaction gas to cloth fiber.

TU C, CHENG Y, QI Y, WANG K, LI J, LIU Z

Method for preparing high infrared element used in aerospace field, involves providing metal material, and graphene coating is obtained by chemical vapor deposition growth on surface of metal material.

YUAN H, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Method for metal protection used in e.g. metal anti-corrosion field in high power wire cable, and high temperature electromagnetic shielding involves providing metal material, and obtaining vertical graphene coating on the surface of metal material by plasma enhanced chemical vapor deposition.

LI J, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Improving cleanliness of graphene film comprises subjecting graphene film to high-temperature treatment in vacuum environment, and carrying out chemical vapor deposition method.

CHEN H, XUE R, LIU X, ZHANG J, LI G, PENG H, LIU Z

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z