国家/地区 中国（10）
IPC部 C（10） H（4） B（3）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（10） C23C016/26（6） C01B031/02（3）
C01B032/186（3） C23C016/44（3） H01B013/00（3）
C23C016/02（2） C23C016/06（2） C23C016/56（2）
H01B001/04（2）
发明人 CHOI M（2） JUNG M（2） MOON J（2）
SHI Y（2） WANG W（2）
公开年 2014（10）
申请年 2014（10）
专利权人 LG ELECTRONI.（2） SHI Y（2） WUXI GEFEI E.（2） WUXI GRAPHEN.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Graphene growth substrate composite etching liquid comprises surfactant, defoamer and cosolvent.

WANG W

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Preparing multi-graphene film, by electrochemical polishing copper substrate, washing substrate using deionized water, further washing using ethanol and then drying, and performing chemical vapor deposition on substrate in growth chamber.

HAO Y, SHI Y, WANG D, ZHANG C, ZHANG J, ZHANG P

Graphene growth involves pre-depositing nickel film on insulating substrate at lower atmospheric pressure, dispersing carbon content on the insulating substrate through surface segregation process, which led to formation of graphene film.

WANG G, LIU F

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y