国家/地区 中国（45）
IPC部 B（45）
IPC大类 B82（45） C01（45） H01（20）
C23（12） B05（9） B32（9）
B01（7） C08（7） C07（5）
C09（5） C30（5） B44（3）
C03（3） C25（3） B21（2）
IPC小类 B82Y（45）
IPC B82Y040/00（45）
发明人 CHUNG H（3） CHUNG H J（3） HEO J（3）
HEO J S（3） SEO S（3） SEO S A（3）
VEERASAMY V（3） VEERASAMY V S（3） WANG Y（3）
WOO Y（3） WOO Y S（3） BAE S（2）
BAE S K（2） CHEN X（2） CHEN Y（2）
公开年 2011（45）
申请年 2011（26）  2010（14）  2009（5） 
专利权人 SAMSUNG ELEC.（4） GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）
BAYER TECHNO.（2） KUNMING PHYS.（2） SONY CORP（2） UNIV SINGAPO.（2）
UNIV SINGAPO.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
UNIV ZHEJIAN.（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Method for preparing graphene, involves taking and dispersing oxidized graphite alkene to obtain solution of oxidized graphite alkene, preparing graphene oxide film through spin-coating, reducing oxide graphene to obtain pure graphene.

CAI C, LIANG H, LIU H, REN W, SU J

Method for preparing nano composite material of graphene and manganese dioxide for use as e.g. catalyst, involves washing product to prepare graphene that is dispersed in potassium permanganate solution, and adding and reacting acid.

CAI Y, GUO N, QIN Z, WANG L

Method for preparing two-dimensional porous silicon dioxide nano-sheet, involves adding oxidized graphite alkene, ethyl orthosilicate, ammonia water and mixed solvent in reactor, and stirring mixture to form graphene oxide solution.

GAO C, KOU L

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J