国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） H01（4） B82（2）
C01（2） C23（2）
IPC小类 C30B（9）
IPC C30B025/18（9）
发明人 XU X（3） CHEN X（2） SUN L（2）
YU G（2） ZHAO X（2）
公开年 2015（9）
申请年 2015（6）  2014（2） 
专利权人 UNIV SHANDON.（2）

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

Preparing hierarchical graphene substrate of zinc oxide arrays used for preparing zinc oxide-based ultraviolet photo-detectors, involve carrying out non-hierarchical zinc oxide chemical vapor deposition growth of graphene nanosheet.

LI L, YANG H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J