国家/地区 中国（35）
IPC部 C（35）
IPC大类 C01（35）
IPC小类 C01B（35）
IPC C01B031/04（35）
发明人 ZHANG Y（5） GUO H（4） ZHANG K（4）
DENG P（3） LEI T（3） VEERASAMY V（3）
VEERASAMY V S（3） CASTRO A H（2） DING G（2）
LI Y（2） WANG H（2） XIE X（2）
YU G（2）
公开年 2012（8） 2011（6） 2013（5） 2015（5） 2016（4） 2009（3） 2014（2）
申请年 2012（10）  2011（5）  2009（4）  2013（4）  2014（3）  2015（3）  2016（3） 
专利权人 UNIV XIDIAN（4） GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）
SHANGHAI INS.（3） CHINESE ACAD.（2） DING G（2） MAX PLANCK G.（2）
UNIV SINGAPO.（2） XIE X（2） ZHANG K（2）

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Preparation method of graphene nanobelts, involves heat-treating dried linear nano-crystals.

YU G, XU J, ZHANG J, WANG H

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V