国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9） C23（4） H01（4）
C01（2）
IPC小类 C30B（9）
IPC C30B029/02（5） C23C014/18（3） C30B025/18（3）
C23C014/30（2） C23C014/35（2） C23C014/58（2）
C30B033/02（2）
发明人 HU J（2） HU Y（2） LI P（2）
PAN M（2） PENG J（2） QIU W（2）
公开年 2020（9）
申请年 2020（9）
专利权人 UNIV NAT DEF.（2）

Growing zinc vanadate oxide/graphene-single-walled carbon nanotubes material with ionic liquid assisted in-situ composite specific crystal surface in zinc ion battery comprises e.g. compounding zinc vanadate oxide nanowire and assembling.

SUN Y, LI C, JIN Y, FU J, WU H

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Manufacturing substrate material useful for graphene growth, comprises e.g. cutting sapphire crystal, forming sapphire plate blank, grinding sapphire sheet blank to form sapphire sheet semifinished product, and chamfering sapphire sheet.

ZHOU Z, YANG L, SHI M, LI Z

New mixed rare earth-transition element doped up-conversion laser crystal, prepared by using mixed crystal of sodium yttrium tetrafluoride and zirconium tetrafluoride, ytterbium(III) ions, erbium(III) ions and graphene quantum dots.

LI D, WANG D, XU X, WANG X, LIU J

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W