国家/地区 中国（19）
IPC部 C（10） H（8） B（7）
IPC大类 H01（8） C01（7） B82（3）
B01（2）
IPC小类 C01B（7） H01L（6） B82Y（3）
B01J（2）
IPC C01B031/04（7） B82Y030/00（2） H01L021/02（2）
发明人 ZHANG X（19）
公开年 2012（19）
申请年 2012（19）
专利权人 UNIV PEKING（8） GRAPHENE BEI.（2）

Graphite alkene/prussian blue complex composite aerogel for electrochromic device comprises three-dimensional network structure by graphene sheet layers, where nanolevel prussian blue complex particle is attached to graphite layer.

CHEN L, ZHANG X

Composite methane catalyst composite comprises methane catalyst and graphene oxide, with methane catalyst comprising perovskite methane catalyst, aluminate type methane catalyst or metal oxide methane catalyst.

WANG S, ZHAO C, ZHANG X, LING J, XUE G, YUAN Y

Preparation of graphene oxide microsphere by immersing solid substrate having hydrophobic surface in mixed organic solvent, injecting graphene oxide aqueous solution, and completely dissolving graphene oxide droplets in organic phase.

ZHANG S, CHEN S, SONG Y, YANG H, ZHANG X

Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.

KE P, WANG A, ZHANG X

Graphite alkene and locking mode optical pump sheet semiconductor laser, has graphene saturable absorption mirror provided with plated multi-layer medium film reflecting mirror layer and graphene layer.

SONG Y, YU Z, TIAN J, ZHANG P, ZHANG X

Preparing graphene, comprises mixing crystalline flake graphite powder with ionic liquid at a room temperature, and grinding the obtained crystalline flake graphite powder-ionic liquid mixture to obtain mixture containing graphene.

CHEN J, QU K, MA S, ZHAO J, ZHANG X

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Etching of multi-layered graphene involves forming multi-layered graphene on substrate, forming bands with specific height on substrate, annealing substrate by supplying argon/hydrogen, and then naturally cooling substrate.

FU Y, HU B, HUANG R, WEI Z, ZHANG X, YE T

Manufacture of metal inductor for wireless communication application, involves forming lower metal layer and insulating dielectric layer, etching, depositing diffusion barrier layer and metal seed layer, and growing graphene layer.

FU Y, HUANG R, LI C, REN L, WEI Q, WEI Z, ZHANG X, ZHOU M