国家/地区 中国（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C23C016/26（10） C01B032/186（6） C23C016/56（6）
H01L021/02（6） C01B032/194（5） H01M004/38（5）
B82Y030/00（4） B82Y040/00（4） C01B032/182（4）
C01B032/184（4） C23C016/02（4） C23C016/455（4）
H01M004/62（4） C01B032/05（3） C23C016/04（3）
发明人 NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（17）
申请年 2021（9）  2020（7） 
专利权人 LAM RES CORP（2） UNIV SINGAPO.（2）

Porous silicon-carbon composite material for lithium ion battery, comprises core-shell structure, where inner core is composite of porous carbon, cerium dioxide and graphene component, and shell is doped with oxide compound selected from phosphorus oxide, arsenic oxide and selenium oxide.

CAO J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Electrical interconnect component comprises connection part that is electrically conductive; and electrical contact on at least a part of a surface of connection part and comprising a graphene oxide film.

YE N, KUBO T, SHIMIZU T