国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） H01（11） B82（2）
C23（2）
IPC小类 C30B（11）
IPC C30B029/40（7） C30B025/18（5） H01L021/02（5）
B82Y040/00（2） C30B025/16（2） C30B028/14（2）
C30B029/02（2） C30B033/02（2）
发明人 FENG H（2） LI P（2） PAN Y（2）
TANG J（2） WANG Y（2）
公开年 2022（11）
申请年 2021（11）
专利权人 CEC COMPOUND.（2）

Preparation method of high-pressure single crystal lithium vanadium fluorophosphate positive electrode material used in field of lithium ion battery, involves mixing vanadium phosphate with lithium fluoride, supplementary fluorine source, flux, carbon source, and ball-milling dispersant.

SONG M, WEI J, DU N

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J

Preparing polycrystalline europium titanate-based magnetic refrigeration material comprises e.g. uniformly mixing europium trioxide and titanium dioxide and sintering, uniformly mixing reducing agent with pre-sintered material, and reducing and sintering mixed material to obtain material.

LI K, LI Z, GAO X, XIE H, SHEN J, MO Z

Preparing indium-phosphate thin film based on gallium-arsenic substrate, comprises e.g. growing gallium-arsenic buffer layer on gallium-arsenic substrate, preparing composite buffer layer on gallium-arsenic buffer layer, forming composite buffer layer and growing indium-phosphate thin film.

JI H, LUO S, WANG Y, XU P

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J