国家/地区 日本（24）
IPC部 C（24）
IPC大类 C01（24） H01（23） B82（6）
C09（5） B01（3） C23（3）
G01（2）
IPC小类 C01B（24）
IPC C01B032/15（24）
发明人 ISOBAYASHI A（3） JIPPO H（3） KAJITA A（3）
KAWASAKI M（3） SAKAI T（3） TAMAKI E（3）
HIRAI Y（2） MIYAZAKI H（2） OGUNI T（2）
SAITO T（2） SATO S（2） YOSHIHIDE H（2）
公开年 2017（21） 2018（3）
申请年 2016（24）
专利权人 TOSHIBA KK（4） FUJITSU LTD（3） SEMICONDUCTO.（3） TORAY IND IN.（3）
UNIV TOHOKU（2）

Graphene nano-ribbon for e.g. magnetoresistive device, has zigzag-type edge structure in both ends of width direction, and in which one edge portion comprises methyl group and boron, and another edge portion comprises methyl group/nitrogen.

JIPPO H, SATO S

Fluorinated graphene oxide for e.g. super capacitor electrode, has reduced amount of nitrogen and boron.

KASHIWAKURA W, MOGI A

Preparation of graphene in formation of graphene film on insulated substrate, involves providing oxidation mild atmosphere, and growing graphene in substrate in pressure-reduced atmosphere by vapor phase growth method.

KANEKO S, KATO C, TANAKA S, OZAWA T, YASUHARA S

Manufacture of graphene for semiconductor element used for e.g. sensor involves immersing a pair of carbon electrodes in solvent, repeatedly generating spark discharge in pulses between electrodes, and forming graphene.

MASHIMO S, HAYAMI S, TAKEHIRA H

Porous material e.g. porous metal used as electrodes in electrical storage apparatus, comprises pores having preset average size and minimum size, and graphene layer, which covers pores.

ITO R, AJIRI M, HOJO D, FUJITA T, AIDA T, CHEN M W

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Apparatus for manufacturing graphene, consists of booster pump which pressurizes and discharges graphite-containing liquid, and stripper for peeling graphite layer from graphite sample by generating jet flow of graphite-containing liquid.

NARUSAWA H

Graphene nanosheet stacked body for aggregate of graphene nanosheet stacked body used for wavelength conversion film and fluorescent probe comprises graphene nanosheets which are included in matrix material.

GOAN K

Semiconductor device has graphene wiring which is connected to conductive region, and corrosion-proof element which is provided to cover area different from partial area of upper surface of connecting element.

MIYAZAKI H, SAKAI T, ISOBAYASHI A, ISHIKURA T, KAJITA A

Semiconductor device, has interconnect having catalyst layer capable of growing graphene, graphene layer in side surface of catalyst layer, and non-catalyst layer in bottom surface of graphene layer, and incapable of growing graphene.

SAITO T, ISOBAYASHI A, KAJITA A