国家/地区 韩国（7）
IPC部 C（7）
IPC大类 C23（7） C01（3） H01（2）
IPC小类 C23C（7） C01B（3） H01L（2）
IPC C23C016/44（7）
发明人
公开年 2014（4） 2013（2）
申请年 2013（7）
专利权人 KOREA ADVANC.（2）

Conductor manufacturing method, involves coating graphene on surface of conductor by using chemical vapor deposition process on surface of conductor, where surface consists of catalyst i.e. copper.

SO S J

Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene, has metallic foil that is deposited on substrate placed above sealing element provided between cover plates.

AHN C W, KANG I S, SHIN Y H, YOO K

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Making graphene monolayer on insulating substrates comprises applying thermal release adhesive tape to bottom graphene layer deposited at bottom of metal foil in chemical vapor deposition graphene synthesis and detaching adhesive tape.

ZURUTUZA E A, CENTENO P A, ALONSO R B, PESQUERA R A, ALONSO RODRIGUEZ B, CENTENO PEREZ A, ZURUTUZA ELORZA A, PESQUERA RODRIGUEZ A, AMAIA Z E, ALBA C P, BEATRIZ A R, AMAIA P R

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Depositing layer of graphene/conjugated carbons on substrate surface in manufacture of organic light emitting diode device, by exposing part of surface to carbon radicals and moving substrate to expose different part of surface to radicals.

LEE S I, HWANG C W, IN L S, WAN H C