国家/地区 韩国（30）
IPC部 C（30）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C01B031/02（24） C01B031/04（18） C23C016/26（13）
C23C016/06（7） C01B032/186（6） B82Y030/00（5）
B82Y040/00（5） C23C016/44（5） C23C016/02（4）
B82B003/00（3） H01B001/04（3） H01B013/00（3）
B01J019/12（2） B01J019/18（2） C08K003/04（2）
发明人 JUNG M（3） LEE J（3） MOON J（3）
PARK S（3） CHOI M（2） JEONG S（2）
JUNG Y（2） JUNG Y G（2） KIM J K（2）
KIM J S（2） KIM T（2） KIM T H（2）
KIM Y（2） PARK I K（2） PARK J H（2）
公开年 2014（30）
申请年 2013（14）  2012（8）  2014（8） 
专利权人 UNIV SUNGKYU.（4） LG ELECTRONI.（3） SAMSUNG ELEC.（3） SAMSUNG TECH.（3）
GRAPHENE SQU.（2） HANWHA AEROS.（2） HANWHA TECHW.（2） KOREA INST M.（2）
NIPPON MININ.（2） POSCO（2） SNU R DB FO.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Graphene useful as an electrode in an electronic device, processed via ion beam treatment method.

KIM S Y, KWON K C

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.

CHOI J W