国家/地区 台湾（8）
IPC部 B（8）
IPC大类 H01（8） B82（5） C01（4）
C07（3） B05（2） B32（2）
C23（2） G01（2）
IPC小类 H01L（8） B82Y（5） C01B（4）
C07C（3） B05D（2） B32B（2）
C07D（2） C23C（2） G01N（2）
IPC H01L051/00（8）
发明人 MUELLEN K（2） SCHWAB M G（2） SCHWAB M G S（2）
公开年 2011（2） 2015（2）
申请年 2010（2）  2013（2） 
专利权人 BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2）

Photodeposition of particles on graphene-semiconductor hybrid panel in semiconductor structure, involves dipping graphene-semiconductor hybrid panel in fluid containing precursor and forming photoinduced electrons and holes.

CHEN C, KUO C, CHEN C H, KUO C C

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Apparatus for producing blackbody spectrum, has thermal spreading layer which includes graphene sheet that is configured to reduce spatial variation of heat in plane of thermal spreading layer.

CHOW J R, KETOLA K S, LA KOMSKI D M, TOWNSEND C W, ELIAS W E, MARBLE S J, LAKOMSKI D M

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G

Apparatus for sensing photons comprises photon sensing layers, which consists of graphene, arranged on top of each other and intermediate layer between each adjacent sensing layers.

VOUTILAINEN M, ROUVALA M, PASANEN P

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Manufacture of nonvolatile memory cell i.e. read/write memory cell or rewritable memory cell comprises forming graphene storage component by providing graphene colloid, and coating graphene colloid over substrate to form graphene layer.

ILKBAHAR A, KUMAR T, PING E