国家/地区 台湾（13）
IPC部 C（12） H（10） B（7）
G（2）
IPC大类 C01（10） H01（8） B82（6）
B01（3） C07（2） C08（2）
G02（2）
IPC小类 C01B（10） B82Y（5） H01L（5）
B01J（3） H01M（3） B82B（2）
G02F（2） H01B（2）
IPC C01B031/02（9） C01B031/04（9） B82Y030/00（5）
B82Y040/00（5） C01B031/00（3） C01B032/15（3）
C01B032/18（3） C01B032/182（3） H01L021/02（3）
B01J019/08（2） B01J019/12（2） H01B001/04（2）
H01L029/16（2） H01M004/13（2） H01M004/62（2）
发明人 FENG X（2） LING Y（2） LING Y C（2）
LIU J（2） LIU J Y（2） MILLEN K（2）
MUELLEN K（2） MULLEN K（2） WANG C（2）
WANG C P（2） WU Z（2）
公开年 2013（13）
申请年 2013（13）
专利权人 UNIV NAT TSI.（3） BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2）

Excellent optical modulator for use in e.g. LCD, has dielectric layer provided between electrodes and comprising substance, and optical adjustment layer provided between dielectric and two-dimensional high mobility graphene layers.

KADONO K, SHIMIZU K, KIMURA N, BANDO M, IZUHA K, SUMINO K, DEWA K

Graphene powder for preparing lithium ion battery electrode, comprises compound having catechol group that adsorbs on graphene, e.g. catechol, dopamine hydrochloride, 3,4-dihydroxyphenylalanine, noradrenalin, and caffeic acid.

SUN P, LIU G, WU Z, WU G, TAMAKI E, KUBOTA Y

Manufacture of metal-doped oxidized graphene used as intermediate for manufacturing capacitor, involves adding graphite to sulfuric acid, sulfonating, adding nitric acid, performing laser ablation and adding hydrochloric acid.

ISAWA K, KOYANAGI M, MAKINO T, SHIBUYA A, IZAWA K

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

Insulated thermal interface material for applying between electronic element e.g. central processing unit, and thermal dissipating element, comprises base including polymer, and filler including graphene dispersed in base.

LING Y, WANG C, LIU J, LING Y C, WANG C P, LIU J Y

Fabricating graphene comprises inserting first electrode that is graphite multilayer material and second electrode into electrolyte without contacting, producing potential difference and permitting liquid to enter into first electrode layer.

LING Y, WANG C, LIU J, LING Y C, WANG C P, LIU J Y

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J

Making graphene layer used as transparent electrode layer in optoelectronic devices, comprises e.g. forming metal layer on first side of substrate, forming carbon source layer on metal layer and irradiating second side of substrate by laser.

CHUEH Y, DING J, LIN H, HUANG Y, QUE Y

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

New graphene oxide, useful as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery, and electronic devices.

TODORIKI H, YUKAWA M, SAITO Y, YAMAKAJI M, YATABE R, IKENUMA T, TODOROKI H, YUGAWA M, YONEDA Y, TSUKUDA R