国家/地区 美国（15）
IPC部 C（15）
IPC大类 C23（15） C01（11） H01（8）
B82（4） B01（3） C25（2）
C30（2）
IPC小类 C23C（15） C01B（11） H01L（7）
B82Y（4） B01J（2） C25D（2）
C30B（2） H01B（2） H01J（2）
IPC C23C016/04（15）
发明人 NAGEL C J（4） BRODEUR C L（3） NARKEVICIUTE I（2）
PARK J（2） VARADARAJAN B N（2）
公开年 2021（15）
申请年 2020（9）  2021（6） 
专利权人 QUANTUM ELEM.（4） APPLIED MATE.（2） LAM RES CORP（2） SAMSUNG ELEC.（2）

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon material, first porous frit defining floor of reactor chamber, second porous frit defining ceiling of the reactor chamber.

NAGEL C J, BRODEUR C L

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Connector pair for use with electrical device, has first connector that includes first electrical contact unit which is provided with graphene layer on metal base material, and second connector includes second electrical contact unit electrically connected to first connector by graphene layer.

KUBO T, SEKI K, OKADA M, HATAKEYAMA K, KOGA K, SHIMIZU T, YE N, KAWAI H, KAWAI Y, GUAN H

Semiconductor device comprises conductive contact set in first insulation layer, and second insulation layer set on first insulation layer and including contact hole that exposes top surface of conductive contact.

JUNG H, LEE J, PARK J

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H