国家/地区 美国（20）
IPC部 C（20） B（17） H（10）
IPC大类 C01（20）
IPC小类 C01B（20）
IPC C01B031/02（16） C01B031/04（15） C23C016/26（15）
B82Y040/00（12） B82Y030/00（11） C01B032/186（5）
B32B037/02（3） B32B043/00（3） B82B003/00（3）
C23C016/56（3） H01B001/04（3） H01L021/02（3）
H01L029/16（3） B01J019/18（2） B21B001/40（2）
发明人 CHOI J（3） HONG B H（3） KIM H（3）
CHIBA G（2） CHIBA Y（2） CHOI J Y（2）
DENG P（2） GUO H（2） HONG B（2）
LEI T（2） SHIN H（2） SHIN H J（2）
SONG Y（2） SONG Y I（2） WOO Y（2）
公开年 2012（20）
申请年 2012（20）
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） SAMSUNG ELEC.（3） UNIV SUNGKYU.（3）
DENG P（2） GRAPHENE SQU.（2） GUO H（2） HANWHA AEROS.（2）
JX NIPPON MI.（2） LEI T（2） NIPPON MININ.（2） NIPPON MININ.（2）
UNIV SUNGKYU.（2） UNIV XIDIAN（2） ZHANG K（2） ZHANG Y（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F